Vertical GaN Transistors

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Program:
SWITCHES
Award:
$1,337,425
Location:
San Jose, California
Status:
CANCELLED
Project Term:
01/01/2014 - 12/12/2016
Website:
TBD

Technology Description:

Avogy will develop a vertical transistor with a gallium nitride (GaN) semiconductor that is 30 times smaller than conventional silicon transistors but can conduct significantly more electricity. Avogy’s GaN transistor will function effectively in high-power electronics because it can withstand higher electric fields and operate at higher temperatures than comparable silicon transistors. Avogy’s vertical device architecture can also enable higher current devices. With such a small and efficient device, Avogy projects it will achieve functional cost parity with conventional silicon transistors within three years, while offering game-changing performance improvements.

Potential Impact:

If successful, Avogy’s transistors will enable smaller, more energy-efficient, more reliable, and more cost-effective high-power converters, electrical motor drivers, and photovoltaic and wind inverters.

Security:

Advances in power electronics could facilitate greater adoption of electric vehicles, which in turn could help reduce U.S. oil imports.

Environment:

More efficient power electronics systems promise reduced electricity consumption, resulting in fewer harmful energy-related emissions.

Economy:

More efficient power electronics would use less energy, saving American families and business owners money on their power bills.

Contact

ARPA-E Program Director:
Dr. Timothy Heidel
Project Contact:
Dr. Anneli Munkholm
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
a.munkholm@Avogy.com

Partners

Oak Ridge National Laboratory
ABB, Inc.
Soraa, Inc.
North Carolina State University

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Release Date:
06/11/2013