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ADEPT Highlights

Displaying 1 - 5 of 9
April 17, 2018

Recent advances in wide band-gap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN) are enabling a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. Past ARPA-E programs (ADEPT, Solar ADEPT, and SWITCHES) have enabled innovations throughout the power electronics value chain, especially in the area of WBG semiconductors.

December 12, 2017

ZINC-AIR GRID ENERGY STORAGE

UPDATED: FEBRUARY 24, 2016 
PROJECT TITLES: DEVELOPING POWERFUL AND EFFICIENT ELECTRIC POWER CONVERTERS
PROGRAM: ADEPT
AWARD: $3,914,527
PROJECT TEAM: Arkansas Power Electronics International (APEI) (Lead), Cree Power and RF (now Wolfspeed); Oak Ridge National Laboratory; Toyota Motor Engineering & Manufacturing North America; University of Arkansas

December 15, 2017

POWERCHIP TO POWER THE WORLD

UPDATED: JUNE 22, 2016
PROJECT TITLE: PowerChip: Advanced Technologies for Integrated Power Electronics
PROGRAM: Agile Delivery of Electric Power Technology (ADEPT)
AWARD: $4,414,003
PROJECT TEAM: MIT (Lead), Dartmouth College, University of Pennsylvania, Georgia Tech
PROJECT TERM: September 1, 2010 – December 31, 2013

December 11, 2017

 

ULTRA FAST SWITCHING TECHNOLOGY FOR MOTOR DRIVES AND DC/AC INVERTERS

UPDATED: March 29, 2016
PROJECT TITLE: High Performance GaN HEMT Modules for Agile Power Electronics
PROGRAM: ADEPT
AWARD: $2,950,000
PROJECT TEAM: Transphorm Inc. (Lead), UC Santa Barbara, Virginia Tech
PROJECT TERM: September 2010 – February 2013

March 15, 2016

U.S. Secretary of Energy Steven Chu today announced 43 cutting-edge research projects that aim to dramatically improve how the U.S. uses and produces energy.

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