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PNDIODES Highlights

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April 17, 2018

Recent advances in wide band-gap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN) are enabling a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. Past ARPA-E programs (ADEPT, Solar ADEPT, and SWITCHES) have enabled innovations throughout the power electronics value chain, especially in the area of WBG semiconductors.

June 13, 2017

The U.S. Department of Energy (DOE) today announced up to $32 million in funding for 16 projects as part of two new Advanced Research Projects Agency-Energy (ARPA-E) programs: ENergy-efficient Light-wave Integrated Technology Enabling Networks that Enhance  Dataprocessing (ENLITENED) and Power Nitride Doping Innovation Offers Devices Enabling SWITCHES (PNDIODES).

September 29, 2017

ARPA-E has announced up to $6.5 million in funding for a new program that seeks to greatly improve the performance and reliability of power electronics semiconductor devices by overcoming the limitations of current fabrication methods.

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