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PNDIODES Highlights

Displaying 1 - 3 of 3
Published:
March 13, 2018

Recent advances in wide band-gap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN) are enabling a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. Past ARPA-E programs (ADEPT, Solar ADEPT, and SWITCHES) have enabled innovations throughout the power electronics value chain, especially in the area of WBG semiconductors.

Posted: April 17, 2018

The U.S. Department of Energy (DOE) today announced up to $32 million in funding for 16 projects as part of two new Advanced Research Projects Agency-Energy (ARPA-E) programs: ENergy-efficient Light-wave Integrated Technology Enabling Networks that Enhance  Dataprocessing (ENLITENED) and Power Nitride Doping Innovation Offers Devices Enabling SWITCHES (PNDIODES).

Posted: June 13, 2017

ARPA-E has announced up to $6.5 million in funding for a new program that seeks to greatly improve the performance and reliability of power electronics semiconductor devices by overcoming the limitations of current fabrication methods.

Posted: September 29, 2017
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