Advanced Manufacturing for SiC MOSFETS

Advanced Manufacturing for SiC MOSFETS


Program:
SWITCHES
Award:
$3,225,000
Location:
Round Rock, Texas
Status:
ALUMNI
Project Term:
01/01/2014 - 09/30/2017

Technology Description:

Monolith Semiconductor will utilize advanced device designs and existing low-cost, high-volume manufacturing processes to create high-performance silicon carbide (SiC) devices for power conversion. SiC devices provide much better performance and efficiency than their silicon counterparts, which are used in the majority of today’s semiconductors. However, SiC devices cost significantly more. Monolith will develop a high-volume SiC production process that utilizes existing silicon manufacturing facilities to help drive down the cost of SiC devices.

Potential Impact:

If successful, Monolith Semiconductor would improve the performance, lower the cost, and facilitate the widespread use of SiC devices in a variety of power electronics applications, including vehicles and motor drives.

Security:

Advances in power electronics could facilitate greater adoption of electric vehicles, which in turn could help reduce U.S. oil imports.

Environment:

More efficient power electronics systems promise reduced electricity consumption, resulting in fewer harmful energy-related emissions.

Economy:

More efficient power electronics would use less energy, saving American families and business owners money on their power bills.

Contact

ARPA-E Program Director:
Dr. Isik Kizilyalli
Project Contact:
Dr. Kevin Matocha
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
kmatocha@monolithsemi.com

Partners

United Technologies Research Center
X-Fab Texas
University of Arkansas
Rensselaer Polytechnic Institute

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Release Date:
06/11/2013