Diamond Power Transistors
Technology Description:
Arizona State University (ASU) will develop a process to produce low-cost, vertical, diamond semiconductor devices for use in high-power electronics. Diamond is an excellent conductor of electricity when boron or phosphorus is added—or doped—into its crystal structures. In fact, diamond can withstand much higher temperatures with higher performance levels than silicon, which is used in the majority of today’s semiconductor devices. However, growing uniformly doped diamond crystals is difficult and expensive. ASU’s innovative diamond-growing process could create greater doping uniformity, helping to significantly lower the cost of diamond semiconductor devices.
Potential Impact:
If successful, ASU will facilitate the widespread use of diamond semiconductor devices with a variety of applications, including high-temperature electronics and electric vehicle motors.
Security:
Advances in power electronics could facilitate greater adoption of electric vehicles, which in turn could help reduce U.S. oil imports.
Environment:
More efficient power electronics systems promise reduced electricity consumption, resulting in fewer harmful energy-related emissions.
Economy:
More efficient power electronics would use less energy, saving American families and business owners money on their power bills.
Contact
ARPA-E Program Director:
Dr. Isik Kizilyalli
Project Contact:
Prof. Robert Nemanich
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
robert.nemanich@asu.edu
Partners
University of California, Davis
Related Projects
Release Date:
06/11/2013