GaN Substrate Technology
Technology Description:
Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) seeds into GaN crystal boules, which are used as the starting material for a number of semiconductor devices. Currently, growing boules from GaN seeds is a slow, expensive, and inconsistent process, so it yields expensive electronic devices of varying quality. Kyma will select the highest quality GaN seeds and use a proprietary hydride vapor phase epitaxy growth process to rapidly grow the seeds into boules while preserving the seed’s structural quality and improving its purity.
Potential Impact:
If successful, Kyma will produce low-cost, high-performing boules for use in a variety of high-power electronics applications, including power inverters and converters.
Security:
Advances in power electronics could facilitate greater adoption of electric vehicles, which in turn could help reduce U.S. oil imports.
Environment:
More efficient power electronics systems promise reduced electricity consumption, resulting in fewer harmful energy-related emissions.
Economy:
More efficient power electronics would use less energy, saving American families and business owners money on their power bills.
Contact
ARPA-E Program Director:
Dr. Isik Kizilyalli
Project Contact:
Dr. Jacob Leach
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
leach@kymatech.com
Partners
White Light Power, Inc.
Soraa, Inc.
Avogy, Inc.
Pennsylvania State University
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Release Date:
06/11/2013