High-Performance Transistors

High-Performance Transistors


Program:
OPEN 2012
Award:
$1,203,998
Location:
Woburn, Massachusetts
Status:
ALUMNI
Project Term:
02/11/2013 - 08/10/2014
Website:
TBD

Technology Description:

RamGoss is using innovative device designs and high-performance materials to develop utility-scale electronic switches that would significantly outperform today’s state-of-the-art devices. Switches are the fundamental building blocks of electronic devices, controlling the electrical energy that flows around an electrical circuit. Today’s best electronic switches for large power applications are bulky and inefficient, which leads to higher cost and wasted power. RamGoss is optimizing new, low-cost materials and developing a new, completely different switch designs. Combined, these innovations would increase the efficiency and reduce the overall size and cost of power converters for a variety of electronic devices and grid-scale applications, including electric vehicle (EV) chargers, large-scale wind plants, and solar power arrays.

Potential Impact:

If successful, RamGoss’ innovative transistors could make it easier and more cost effective to integrate large-scale renewable power plants and EVs into the grid, helping to facilitate their increased use.

Security:

This project could contribute to a smarter, more reliable, more advanced, and secure electric grid.

Environment:

More efficient power converters could help reduce U.S. electricity consumption, and in turn reduce the harmful emissions created by coal-fired power plants.

Economy:

Efficient and affordable grid-scale power converters could help lower power bills for average consumers.

Contact

ARPA-E Program Director:
Dr. John Lemmon
Project Contact:
Dr. Bunmi Adekore
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
badekore@ramgoss.com

Related Projects


Release Date:
03/02/2012