Low-Cost GaN Substrates

Low-Cost GaN Substrates


Program:
SWITCHES
Award:
$225,000
Location:
Fremont, California
Status:
ALUMNI
Project Term:
02/17/2014 - 05/17/2015

Technology Description:

Soraa will develop a cost-effective technique to manufacture high-quality, high-performance gallium nitride (GaN) crystal substrates that have fewer defects by several orders of magnitude than conventional GaN substrates and cost about 10 times less. Substrates are thin wafers of semiconducting material needed to power devices like transistors and integrated circuits. Most GaN-based electronics today suffer from very high defect levels and, in turn, reduced performance. In addition to reducing defects, Soraa will also develop methods capable of producing large-area GaN substrates—3 to 4 times larger in diameter than conventional GaN substrates—that can handle high-power switching applications.

Potential Impact:

If successful, Soraa will produce cost-effective, high-quality, high-performance GaN substrates for use in a variety of high-power applications, including motor drives and efficient lighting.

Security:

Advances in power electronics could facilitate greater adoption of electric vehicles, which in turn could help reduce U.S. oil imports.

Environment:

More efficient power electronics systems promise reduced electricity consumption, resulting in fewer harmful energy-related emissions.

Economy:

More efficient power electronics would use less energy, saving American families and business owners money on their power bills.

Contact

ARPA-E Program Director:
Dr. Timothy Heidel
Project Contact:
Dr. Mark D'Evelyn
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
mdevelyn@soraa.com

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Release Date:
06/11/2013