Spalling GaN Transistors

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Program:
SWITCHES
Award:
$3,725,000
Location:
New York, New York
Status:
ALUMNI
Project Term:
04/01/2014 - 10/31/2019

Technology Description:

Columbia University will create high-performance, low-cost, vertical gallium nitride (GaN) devices using a technique called spalling, which involves exfoliating a working circuit and transferring it to another material. Columbia and its project partners will spall and bond entire transistors from high-performance GaN wafers to lower cost silicon substrates. Substrates are thin wafers of semiconducting material needed to power devices like transistors and integrated circuits. GaN substrates operate much more efficiently than silicon substrates, particularly at high voltages, but the high cost of GaN is a barrier to its widespread use. The spalling technique developed by Columbia will allow GaN substrates to be reused, lowering their manufacturing cost.

Potential Impact:

If successful, Columbia’s GaN transfer method will facilitate low-cost, high-power transistors for industrial motors and other automotive applications.

Security:

Advances in power electronics could facilitate greater adoption of electric vehicles, which in turn could help reduce U.S. oil imports.

Environment:

More efficient power electronics systems promise reduced electricity consumption, resulting in fewer harmful energy-related emissions.

Economy:

More efficient power electronics would use less energy, saving American families and business owners money on their power bills.

Contact

ARPA-E Program Director:
Dr. Isik Kizilyalli
Project Contact:
Prof. Kenneth Shepard
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
shepard@ee.columbia.edu

Partners

IBM T. J. Watson Research Center
Veeco
Massachusetts Institute of Technology
IQE

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Release Date:
06/11/2013