Utility-Scale Silicon Carbide Semiconductor

Utility-Scale Silicon Carbide Semiconductor


Program:
ADEPT
Award:
$2,530,949
Location:
Dulles, Virginia
Status:
ALUMNI
Project Term:
09/01/2010 - 02/28/2013

Technology Description:

GeneSiC Semiconductor is developing an advanced silicon-carbide (SiC)-based semiconductor called an anode-switched thyristor. This low-cost, compact SiC semiconductor conducts higher levels of electrical energy with better precision than traditional silicon semiconductors. This efficiency will enable a dramatic reduction in the size, weight, and volume of the power converters and the electronic devices they are used in. GeneSiC is developing its SiC-based semiconductor for utility-scale power converters. Traditional silicon semiconductors can’t process the high voltages that utility-scale power distribution requires, and they must be stacked in complicated circuits that require bulky insulation and cooling hardware. GeneSiC’s semiconductors are well suited for high-power applications like large-scale renewable wind and solar energy installations.

Potential Impact:

If successful, GeneSiC would enable integration of large-scale wind and solar power plants into the smart grid, the advanced electrical infrastructure that will replace today’s outdated electrical grid.

Security:

This project could contribute to a smarter, more advanced, and more reliable power grid.

Environment:

This project could help increase the use of renewable energy sources and in turn reduce the harmful emissions created by traditional coal-fired power plants.

Economy:

Projects like this could help establish U.S. businesses as technical leaders in the electronics industry and bring lower power bills to consumers.

Contact

ARPA-E Program Director:
Dr. Timothy Heidel
Project Contact:
Dr. Ranbir Singh
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
ranbir.singh@genesicsemi.com

Partners

Dow Corning Corporation

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Release Date:
03/02/2010