Vertical GaN Devices
Technology Description:
The University of California, Santa Barbara (UCSB) will develop new vertical gallium nitride (GaN) semiconductor technologies that will significantly enhance the performance and reduce the cost of high-power electronics. UCSB will markedly reduce the size of its vertical GaN semiconductor devices compared to today’s commercially available, lateral GaN-on-silicon-based devices. Despite their reduced size, UCSB’s vertical GaN devices will exhibit improved performance and significantly lower power losses when switching and converting power than lateral GaN devices. UCSB will also simplify fabrication processes to keep costs down.
Potential Impact:
If successful, UCSB’s devices will enable high-power conversion at low cost in motor drives, electric vehicles, and other applications.
Security:
Advances in power electronics could facilitate greater adoption of electric vehicles, which in turn could help reduce U.S. oil imports.
Environment:
More efficient power electronics systems promise reduced electricity consumption, resulting in fewer harmful energy-related emissions.
Economy:
More efficient power electronics would use less energy, saving American families and business owners money on their power bills.
Contact
ARPA-E Program Director:
Dr. Isik Kizilyalli
Project Contact:
Prof. Umesh Mishra
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
mishra@ece.ucsb.edu
Partners
US Naval Research Laboratory
Transphorm, Inc.
Arizona State University
Related Projects
Release Date:
06/11/2013