Vertical GaN Substrates
Technology Description:
SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates for use in high-power electronic devices. In its two-phase project, SixPoint Materials will first focus on developing a high-quality GaN substrate and then on expanding the substrate’s size. Substrates are thin wafers of semiconducting material used to power devices like transistors and integrated circuits. SixPoint Materials will use a two-phase production approach that employs both hydride vapor phase epitaxy technology and ammonothermal growth techniques to create its high-quality, low-cost GaN substrates.
Potential Impact:
If successful, SixPoint Materials will enable the production of low-cost, high-power GaN devices that are significantly more efficient at converting power for electric motors, electric vehicles, and power grid applications than today’s state-of-the-art silicon devices.
Security:
Advances in power electronics could facilitate greater adoption of electric vehicles, which in turn could help reduce U.S. oil imports.
Environment:
More efficient power electronics systems promise reduced electricity consumption, resulting in fewer harmful energy-related emissions.
Economy:
More efficient power electronics would use less energy, saving American families and business owners money on their power bills.
Contact
ARPA-E Program Director:
Dr. Isik Kizilyalli
Project Contact:
Dr. Tadao Hashimoto
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
tadao@spmaterials.com
Partners
Cornell University
University of Notre Dame
Related Projects
Release Date:
06/11/2013