Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency
Publications
Recent advances in wide band-gap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN) are enabling a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. Past ARPA-E programs (ADEPT, Solar ADEPT, and SWITCHES) have enabled innovations throughout the power electronics value chain, especially in the area of WBG semiconductors.
ARPA-E Announces New Funding Opportunity Announcement (FOA)
Press Releases
ARPA-E has announced up to $6.5 million in funding for a new program that seeks to greatly improve the performance and reliability of power electronics semiconductor devices by overcoming the limitations of current fabrication methods.
Department of Energy Advances $32 Million in Funding for Advanced Technologies
Press Releases
The U.S. Department of Energy (DOE) today announced up to $32 million in funding for 16 projects as part of two new Advanced Research Projects Agency-Energy (ARPA-E) programs: ENergy-efficient Light-wave Integrated Technology Enabling Networks that Enhance Dataprocessing (ENLITENED) and Power Nitride Doping Innovation Offers Devices Enabling SWITCHES (PNDIODES).