SWITCHES

Cornell University will develop an innovative, high-efficiency, gallium nitride (GaN) power switch. Cornell’s design is significantly smaller and operates at much higher performance levels than conventional silicon power switches, making it ideal for use in a variety of power electronics applications. Cornell will also reuse expensive GaN materials and utilize conventional low-cost production methods to keep costs down.

Arizona State University (ASU) will develop a process to produce low-cost, vertical, diamond semiconductor devices for use in high-power electronics. Diamond is an excellent conductor of electricity when boron or phosphorus is added—or doped—into its crystal structures. In fact, diamond can withstand much higher temperatures with higher performance levels than silicon, which is used in the majority of today’s semiconductor devices. However, growing uniformly doped diamond crystals is difficult and expensive.

iBeam Materials is developing a scalable manufacturing method to produce low-cost gallium nitride (GaN) LED devices for use in solid-state lighting. iBeam Materials uses an ion-beam crystal-aligning process to create single-crystal-like templates on arbitrary substrates thereby eliminating the need for small rigid single-crystal substrates. This process is inexpensive, high-output, and allows for large-area deposition in particular on flexible metal foils.

Michigan State University (MSU) will develop high-voltage diamond semiconductor devices for use in high-power electronics. Diamond is an excellent conductor of electricity when boron or phosphorus is added—or doped—into its crystal structures. It can also withstand much higher temperatures with higher performance levels than silicon, which is used in the majority of today’s semiconductors. However, current techniques for growing doped diamond and depositing it on electronic devices are difficult and expensive.

Columbia University will create high-performance, low-cost, vertical gallium nitride (GaN) devices using a technique called spalling, which involves exfoliating a working circuit and transferring it to another material. Columbia and its project partners will spall and bond entire transistors from high-performance GaN wafers to lower cost silicon substrates. Substrates are thin wafers of semiconducting material needed to power devices like transistors and integrated circuits.

The University of California, Santa Barbara (UCSB) will develop new vertical gallium nitride (GaN) semiconductor technologies that will significantly enhance the performance and reduce the cost of high-power electronics. UCSB will markedly reduce the size of its vertical GaN semiconductor devices compared to today’s commercially available, lateral GaN-on-silicon-based devices. Despite their reduced size, UCSB’s vertical GaN devices will exhibit improved performance and significantly lower power losses when switching and converting power than lateral GaN devices.

HRL Laboratories will develop a high-performance, low-cost, vertical gallium nitride (GaN) transistor that could displace the silicon transistor technologies used in most high-power switching applications today. GaN transistors can operate at higher temperatures, voltages, and currents than their silicon counterparts, but they are expensive to manufacture. HRL will combine innovations in semiconductor material growth, device fabrication, and circuit design to create its high-performance GaN vertical transistor at a competitive manufacturing cost.

Soraa will develop a cost-effective technique to manufacture high-quality, high-performance gallium nitride (GaN) crystal substrates that have fewer defects by several orders of magnitude than conventional GaN substrates and cost about 10 times less. Substrates are thin wafers of semiconducting material needed to power devices like transistors and integrated circuits. Most GaN-based electronics today suffer from very high defect levels and, in turn, reduced performance.

Fairfield Crystal Technology will develop a new technique to accelerate the growth of gallium nitride (GaN) single-crystal boules. A boule is a large crystal that is cut into wafers and polished to provide a surface, or substrate, suitable for fabricating a semiconductor device.