20-kV GaN Switch Technology Demonstrated in High-Efficiency Medium-Voltage Building Block

Default ARPA-E Project Image

Program:
OPEN 2018
Award:
$3,235,000
Location:
Blacksburg, Virginia
Status:
ALUMNI
Project Term:
09/01/2019 - 03/31/2023
Website:

Technology Description:

Virginia Tech will accelerate deployment of power electronics into grid-scale energy applications by developing 20 kV GaN devices integrated into a medium-voltage (MV) power module. For the GaN power devices, high-quality substrates and innovative growth techniques will be used to reduce the background impurity contamination in the thick layers needed to block 20 kV. The power module will be fabricated using three-dimensional packaging for improved thermal management and high-power density at 20 kV. The power module will enable the full potential of high-voltage, high-temperature, and fast-switching GaN devices in MV power converters for use in renewable energy grid-level applications and transportation.

Potential Impact:

The cornerstone of the program is the development of a 20 kV GaN switch delivered in a power module, integrated with gate drivers and protections, and produced as an MV building block.

Security:

The technology will position the U.S. to monopolize global GaN-based energy markets.

Environment:

The technology accelerates deployment of power electronics into grid-scale energy applications, dramatically reducing energy consumption-related emissions.

Economy:

Advancement in power electronics promises enormous energy efficiency gains throughout the U.S. economy.

Contact

ARPA-E Program Director:
Dr. Daniel Cunningham
Project Contact:
Prof. Khai Ngo
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
kdtn@vt.edu

Partners

National Renewable Energy Laboratory
United Technologies Research Center
SixPoint Materials, Inc.
University of Notre Dame
Pennsylvania State University

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Release Date:
12/13/2017