GaN Crystal Substrates
Power semiconductor devices are critical to America’s energy infrastructure—all electronics, from laptops to electric motors, rely on them to control or convert electrical energy in order to operate properly. Unfortunately, the performance and efficiency of today’s dominant power semiconductor device material, Silicon, suffer at higher power levels and higher temperature. This results in substantial loss of efficiency across our energy infrastructure. Innovative new semiconductor materials, device architectures, and fabrication processes promise to improve the performance and efficiency of existing electronic devices and to pave the way for next-generation power electronics.
Project Innovation + Advantages:
Fairfield Crystal Technology will develop a new technique to accelerate the growth of gallium nitride (GaN) single-crystal boules. A boule is a large crystal that is cut into wafers and polished to provide a surface, or substrate, suitable for fabricating a semiconductor device. Fairfield Crystal Technology’s unique boule-growth technique will rapidly produce superior-quality GaN crystal boules—overcoming the quality and growth-rate barriers typically associated with conventional growth techniques, including the current state-of-the-art hydride vapor phase epitaxy technique, and helping to significantly reduce manufacturing costs.
If successful, Fairfield Crystal Technology’s boule-growth technique would produce low-cost, high-quality GaN substrates for use in a variety of power electronic devices, including power inverters and converters.
Advances in power electronics could facilitate greater adoption of electric vehicles, which in turn could help reduce U.S. oil imports.
More efficient power electronics systems promise reduced electricity consumption, resulting in fewer harmful energy-related emissions.
More efficient power electronics would use less energy, saving American families and business owners money on their power bills.