GaN Crystal Substrates

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Program:
SWITCHES
Award:
$309,107
Location:
New Milford, Connecticut
Status:
ALUMNI
Project Term:
03/05/2014 - 06/22/2015

Technology Description:

Fairfield Crystal Technology will develop a new technique to accelerate the growth of gallium nitride (GaN) single-crystal boules. A boule is a large crystal that is cut into wafers and polished to provide a surface, or substrate, suitable for fabricating a semiconductor device. Fairfield Crystal Technology’s unique boule-growth technique will rapidly produce superior-quality GaN crystal boules—overcoming the quality and growth-rate barriers typically associated with conventional growth techniques, including the current state-of-the-art hydride vapor phase epitaxy technique, and helping to significantly reduce manufacturing costs.

Potential Impact:

If successful, Fairfield Crystal Technology’s boule-growth technique would produce low-cost, high-quality GaN substrates for use in a variety of power electronic devices, including power inverters and converters.

Security:

Advances in power electronics could facilitate greater adoption of electric vehicles, which in turn could help reduce U.S. oil imports.

Environment:

More efficient power electronics systems promise reduced electricity consumption, resulting in fewer harmful energy-related emissions.

Economy:

More efficient power electronics would use less energy, saving American families and business owners money on their power bills.

Contact

ARPA-E Program Director:
Dr. Timothy Heidel
Project Contact:
Dr. Shaoping Wang
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
swang@fairfieldcrystal.com

Partners

Stony Brook University

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Release Date:
06/11/2013