GaN MOCVD Growth on Native Substrates for High Voltage (15-20 KV) Vertical Power Devices
Project Innovation + Advantages:
The Ohio State University will develop GaN semiconductor materials suitable for high voltage (15-20 kV) power control and conversion. The team will develop a unique photon-assisted metal organic chemical vapor deposition (PA-MOCVD) method to grow thick GaN films with low background impurity contamination, necessary to allow high-voltage operation with high efficiency. The thick GaN layers will be deposited by PA-MOCVD on high-quality bulk GaN base materials with reduced defects, critical to the growth of high-quality GaN films. High-voltage GaN devices will be designed, fabricated, and tested to provide feedback for further GaN material growth improvement and optimization.
The objective of the project is to develop PA-MOCVD homoepitaxy of GaN on native substrates with a fast growth rate (15-20 micrometers per hour), low background doping, and smooth surface morphology to enable high voltage (15-20 kV) vertical power devices.
Advancement in power electronics promises enormous energy efficiency gains throughout the U.S. economy.