GaN MOCVD Growth on Native Substrates for High Voltage (15-20 KV) Vertical Power Devices

Default ARPA-E Project Image

Program:
OPEN 2018
Award:
$1,850,249
Location:
Columbus, Ohio
Status:
ALUMNI
Project Term:
09/16/2019 - 12/31/2022
Website:

Technology Description:

The Ohio State University will develop GaN semiconductor materials suitable for high voltage (15-20 kV) power control and conversion. The team will develop a unique photon-assisted metal organic chemical vapor deposition (PA-MOCVD) method to grow thick GaN films with low background impurity contamination, necessary to allow high-voltage operation with high efficiency. The thick GaN layers will be deposited by PA-MOCVD on high-quality bulk GaN base materials with reduced defects, critical to the growth of high-quality GaN films. High-voltage GaN devices will be designed, fabricated, and tested to provide feedback for further GaN material growth improvement and optimization.

Potential Impact:

The objective of the project is to develop PA-MOCVD homoepitaxy of GaN on native substrates with a fast growth rate (15-20 micrometers per hour), low background doping, and smooth surface morphology to enable high voltage (15-20 kV) vertical power devices.

Security:

This program will enhance U.S. technological leadership and manufacturing of vertical GaN power devices.

Environment:

If widely implemented, this technology would dramatically reduce energy consumption-related emissions.

Economy:

Advancement in power electronics promises enormous energy efficiency gains throughout the U.S. economy.

Contact

ARPA-E Program Director:
Dr. Isik Kizilyalli
Project Contact:
Prof. Hongping Zhao
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
zhao.2592@osu.edu

Partners

SixPoint Materials, Inc.

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Release Date:
12/13/2017