GaN Power Transistor

Default ARPA-E Project Image

Program:
SWITCHES
Award:
$3,435,498
Location:
Ithaca, New York
Status:
ALUMNI
Project Term:
08/01/2015 - 10/16/2017
Website:

Technology Description:

Cornell University will develop an innovative, high-efficiency, gallium nitride (GaN) power switch. Cornell’s design is significantly smaller and operates at much higher performance levels than conventional silicon power switches, making it ideal for use in a variety of power electronics applications. Cornell will also reuse expensive GaN materials and utilize conventional low-cost production methods to keep costs down.

Potential Impact:

If successful, Cornell’s small, high-performance, low-cost GaN power transistors would significantly improve the efficiency of a variety of power electronics, including motor drives.

Security:

Advances in power electronics could facilitate greater adoption of electric vehicles, which in turn could help reduce U.S. oil imports.

Environment:

More efficient power electronics systems promise reduced electricity consumption, resulting in fewer harmful energy-related emissions.

Economy:

More efficient power electronics would use less energy, saving American families and business owners money on their power bills.

Contact

ARPA-E Program Director:
Dr. Isik Kizilyalli
Project Contact:
Huili (Grace) Xing
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
grace.xing@cornell.edu

Partners

United Technologies Research Center
TriQuint Semiconductor
IQE

Related Projects

• Arizona State University (ASU) - Diamond Power Transistors
• Avogy - Vertical GaN Transistors
• Columbia University - Spalling GaN Transistors
• Cornell University - GaN Power Transistor
• Fairfield Crystal Technology - GaN Crystal Substrates
• HRL Laboratories - Vertical GaN Transistor
• iBeam Materials - GaN LEDs on Flexible Metal Foils
• Kyma Technologies - GaN Substrate Technology
• Michigan State University (MSU) - Diamond Semiconductor Devices
• MicroLink Devices - High-Power Transistor Fabrication
• Monolith Semiconductor - Advanced Manufacturing for SiC MOSFETS
• SixPoint Materials - Vertical GaN Substrates
• Soraa - Low-Cost GaN Substrates
• University of California, Santa Barbara (UC Santa Barbara) - Vertical GaN Devices

Release Date:
06/11/2013