07/05/2021 - 07/04/2023
Project Innovation + Advantages:
Adroit Materials will grow and fabricate aluminum nitride (AlN)-based Schottky diodes with electrical properties that will drastically reduce forward conduction (energy) losses compared with existing high-power diodes. The team will achieve this objective through implanting silicon ions in AlN, a wide bandgap semiconductor, combined with sophisticated point defect control processes to achieve controlled low doping. These breakthroughs enable a paradigm shift for the feasibility of AlN in next-generation power electronics.