kV-class GaN-based Junction Barrier Schottky Diodes Using Ion Implantation
This topic seeks to support entrepreneurial energy discoveries, by identifying and supporting disruptive concepts in energy-related technologies within small businesses and collaborations with universities and national labs. These projects have the potential for large-scale impact, and if successful could create new paradigms in energy technology with the potential to achieve significant reductions in U.S. energy consumption, energy-related imports, or energy-related emissions. These specific projects address technology areas across ARPA-E’s mission spaces, with particular focus on: Advanced bioreactors; Approaches and tools to create enhanced geothermal systems; Non-evaporative dehydration and drying technologies; Approaches to significantly enhance the rate and/or potential scale of carbon mineralization; Separation of CO2 from ambient air (direct air capture); High-rate separation of dissolved inorganic carbon from the ocean to produce a CO2 stream; Advanced trees and other engineered biological systems for carbon sequestration; Innovative deep ocean collector designs for mining polymetallic nodules; Environmental sensors capable of operation in deep ocean environments for mining polymetallic nodules; and Non-carbothermic smelting technologies. Awards under this topic are working to support research and establish potential new areas for technology development, while providing ARPA-E with information that could lead to new focused funding programs. The focus of these projects is to support exploratory research to establish viability, proof-of-concept demonstration for new energy technology, and/or modeling and simulation efforts to guide development for new energy technologies.
Project Innovation + Advantages:
Adroit Materials aims to grow and fabricate gallium nitride (GaN)-based Junction Barrier Schottky (JBS) diodes using a novel ion implantation process. These JBS diodes are targeted for use in adjustable speed drive (ASD) motor systems, replacing silicon and silicon carbide (Si and SiC)-based diodes. Compared with existing Si diode-based systems, the energy loss in the diode front end rectifier system could be reduced by about 50%. The team will perform selective area doping via implantation of magnesium ions in combination with high pressure, high temperature activation annealing.