kV-class GaN-based Junction Barrier Schottky Diodes Using Ion Implantation

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Program:
Exploratory Topics
Award:
$500,000
Location:
Raleigh,
North Carolina
Status:
ACTIVE
Project Term:
06/18/2021 - 06/17/2023

Project Innovation + Advantages:

Adroit Materials aims to grow and fabricate gallium nitride (GaN)-based Junction Barrier Schottky (JBS) diodes using a novel ion implantation process. These JBS diodes are targeted for use in adjustable speed drive (ASD) motor systems, replacing silicon and silicon carbide (Si and SiC)-based diodes. Compared with existing Si diode-based systems, the energy loss in the diode front end rectifier system could be reduced by about 50%. The team will perform selective area doping via implantation of magnesium ions in combination with high pressure, high temperature activation annealing.

Contact

ARPA-E Program Director:
Dr. Isik Kizilyalli
Project Contact:
Dr. Ronny Kirste
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
ronny@adroitmaterials.com

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