GeneSiC Semiconductor will lead a team to develop high-power and voltage (1200V) vertical transistors on free-standing gallium nitride (GaN) substrates. Bipolar junction transistors amplify or switch electrical current. NPN junction transistors are one class of these transistors consisting of a layer of p-type semiconductor between two n-type semiconductors. The output electrical current between two terminals is controlled by applying a small input current at the third terminal. The proposed effort combines the latest innovations in device designs/process technology, bulk GaN substrate technology, and innovative metal-organic chemical vapor deposition epitaxial growth techniques. If the proposed design concept is successful, it will enable three-fold improvement of power density in high voltage devices, and provide a low-cost solution for mass market power conversion. Moreover, the device can be processed with significantly lower process complexity and cost, as compared to competing silicon carbide and GaN device technologies. GeneSiC will focus on all device development tasks while its partner, Adroit Materials, will focus on the GaN epitaxial growth on bulk GaN substrates, as well as detailed materials characterization according to specifications generated by GeneSiC.