Qromis will develop a new type of gallium nitride (GaN) transistor, called a lateral junction field effect transistor (LJFET) and investigate its reliability compared to other types of transistors, such as SiC junction field effect transistors (JFETs) and GaN-based high electron mobility transistors (HEMTs). Qromis' innovative LJFET design distributes and places the peak electric field away from the surface, eliminating a key point of failure that has plagued GaN HEMT devices and prevented them from achieving widespread use. If successful, this project will deliver a 1.5kV, 10A GaN LJET devices that would be scalable to 100A. The devices will be fabricated on thick, uniform GaN layers deposited on a coefficient of thermal expansion matched 8-inch QST® engineered platform that is compatible with current silicon processing equipment - reducing the cost of the devices. The uniform GaN layers on the large area platform will increase the yield of the devices further decreasing the cost. Finally, the thick GaN will enable the higher voltage standoff and improve the thermal management of the devices.