SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates for use in high-power electronic devices. In its two-phase project, SixPoint Materials will first focus on developing a high-quality GaN substrate and then on expanding the substrate’s size. Substrates are thin wafers of semiconducting material used to power devices like transistors and integrated circuits. SixPoint Materials will use a two-phase production approach that employs both hydride vapor phase epitaxy technology and ammonothermal growth techniques to create its high-quality, low-cost GaN substrates.
If successful, SixPoint Materials will enable the production of low-cost, high-power GaN devices that are significantly more efficient at converting power for electric motors, electric vehicles, and power grid applications than today’s state-of-the-art silicon devices.
Advances in power electronics could facilitate greater adoption of electric vehicles, which in turn could help reduce U.S. oil imports.
More efficient power electronics systems promise reduced electricity consumption, resulting in fewer harmful energy-related emissions.
More efficient power electronics would use less energy, saving American families and business owners money on their power bills.