HRL Laboratories will develop a high-performance, low-cost, vertical gallium nitride (GaN) transistor that could displace the silicon transistor technologies used in most high-power switching applications today. GaN transistors can operate at higher temperatures, voltages, and currents than their silicon counterparts, but they are expensive to manufacture. HRL will combine innovations in semiconductor material growth, device fabrication, and circuit design to create its high-performance GaN vertical transistor at a competitive manufacturing cost.
If successful, HRL will develop high-performance GaN vertical transistors that cost the same as today’s widely used silicon transistors, but experience significantly lower power losses.
Advances in power electronics could facilitate greater adoption of electric vehicles, which in turn could help reduce U.S. oil imports.
More efficient power electronics systems promise reduced electricity consumption, resulting in fewer harmful energy-related emissions.
More efficient power electronics would use less energy, saving American families and business owners money on their power bills.