Avogy will develop a vertical transistor with a gallium nitride (GaN) semiconductor that is 30 times smaller than conventional silicon transistors but can conduct significantly more electricity. Avogy’s GaN transistor will function effectively in high-power electronics because it can withstand higher electric fields and operate at higher temperatures than comparable silicon transistors. Avogy’s vertical device architecture can also enable higher current devices. With such a small and efficient device, Avogy projects it will achieve functional cost parity with conventional silicon transistors within three years, while offering game-changing performance improvements.
If successful, Avogy’s transistors will enable smaller, more energy-efficient, more reliable, and more cost-effective high-power converters, electrical motor drivers, and photovoltaic and wind inverters.
Advances in power electronics could facilitate greater adoption of electric vehicles, which in turn could help reduce U.S. oil imports.
More efficient power electronics systems promise reduced electricity consumption, resulting in fewer harmful energy-related emissions.
More efficient power electronics would use less energy, saving American families and business owners money on their power bills.