Avogy

Avogy will develop a vertical transistor with a gallium nitride (GaN) semiconductor that is 30 times smaller than conventional silicon transistors but can conduct significantly more electricity. Avogy’s GaN transistor will function effectively in high-power electronics because it can withstand higher electric fields and operate at higher temperatures than comparable silicon transistors. Avogy’s vertical device architecture can also enable higher current devices. With such a small and efficient device, Avogy projects it will achieve functional cost parity with conventional silicon transistors within three years, while offering game-changing performance improvements.

If successful, Avogy’s transistors will enable smaller, more energy-efficient, more reliable, and more cost-effective high-power converters, electrical motor drivers, and photovoltaic and wind inverters.