8" GaN-on-Si Super Junction Devices for Next Generation Power Electronics

Default ARPA-E Project Image

Program:
OPEN 2021
Award:
$4,973,760
Location:
Cambridge, Massachusetts
Status:
ACTIVE
Project Term:
07/25/2022 - 07/24/2025
Website:

Technology Description:

The Massachusetts Institute of Technology (MIT) and collaborators will develop a new generation of power electronics based on vertical GaN superjunction diodes and transistors that can break the theoretical limit of today’s GaN unipolar power devices. MIT’s new superjunction structure will provide transistors and diodes with an on-resistance at least 5X better than today’s best GaN or silicon carbide (SiC) power devices, and at least 50-100X better than today’s commercial Si power devices with similar voltage ratings. The advantages of the new GaN power devices significantly improve their potential for commercialization in medium- and high-voltage and high-current applications.

Potential Impact:

MIT’s proposed GaN power devices will not only offer better performance for efficient power conversion in data centers, solar farms, power grid and electric vehicles., but also can potentially reduce device cost.

Security:

These new GaN power devices will enable the next generation of low-cost, fast, small, and reliable power electronics, which are key for efficient power conversion in data centers, solar farms, power grids, and EVs.

Environment:

GaN devices are gaining steady acceptance for supporting electrification of vehicles and sustainable energy technologies.

Economy:

This new technology could reduce the cost of GaN-based power devices by 50-80%.

Contact

ARPA-E Program Director:
Dr. Olga Spahn
Project Contact:
Prof. Tomas Palacios
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
tpalacios@mit.edu

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Release Date:
02/11/2021