Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency
Publications
Recent advances in wide band-gap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN) are enabling a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. Past ARPA-E programs (ADEPT, Solar ADEPT, and SWITCHES) have enabled innovations throughout the power electronics value chain, especially in the area of WBG semiconductors.
SolarBridge Technologies (Solar ADEPT)
Impact Sheet
CAPTURING SOLAR ENERGY EFFICIENTLY UPDATED: APRIL 26, 2016 PROJECT TITLE: Scalable Submodule Power Conversion for Utility-Scale Photovoltaics PROGRAM: Solar Agile Delivery of Electrical Power Technology (Solar ADEPT) AWARD: $1,749,408 PROJECT TEAM: SolarBridge Technologies (Lead); University of Illinois, Urbana Champaign PROJECT TERM: February 2012 to June 2015
Department of Energy Awards $156 Million for Groundbreaking Energy Research Projects
Press Releases
WASHINGTON, DC -- Arun Majumdar, Director of the Department of Energy’s Advanced Research Projects Agency-Energy (ARPA-E), today announced 60 cutting-edge research projects aimed at dramatically improving how the U.S. produces and uses energy.
Secretary Chu Announces $130 Million for Advanced Research Projects
Press Releases
WASHINGTON, DC -- U.S. Department of Energy Secretary Steven Chu announced today that up to $130 million from the Advanced Research Projects Agency-Energy (ARPA-E) will be made available to develop five new program areas that could spark critical breakthrough technologies and secure America's energy future.
Power Electronics in Photovoltaic Systems Workshop
Events
The workshop aimed to bring together some of the world’s foremost experts in PV technology as well as leaders from industry, academia, and government with diverse perspectives to discuss the challenges and opportunities related to the generation of solar power.