Impact Sheet
LOWER COST GaN FOR LIGHTING AND ELECTRONICS EFFICIENCY UPDATED: MARCH 28, 2016 PROJECT TITLES:  Ammonothermal Growth of GaN Substrates for LEDs and Power ElectronicsPROGRAM: SWITCHES and OPEN 2009AWARD: $6,544,259PROJECT TEAM: SoraaPROJECT TERM: January 2011 to January 2016

Impact Sheet
A NEW MODEL FOR WIDE BANDGAP SEMICONDUCTOR MANUFACTURING IN THE U.S. UPDATED: MARCH 17, 2016 PROJECT TITLES: Advanced Manufacturing and Performance Enhancements for Reduced Cost Silicon Carbide MOSFETS (AMPERES) PROGRAM: SWITCHESAWARD:  $3,225,000PROJECT TEAM:  Monolith Semiconductor (Lead), X-Fab Texas, Rensselaer Polytechnic Institute, United Technologies Research Center, University of Arkansas 

Video: Awardee Profile
The ARPA-E model is unique in that the agency does not just provide teams funding. Throughout the lifetime of an ARPA-E award, ARPA-E Program Directors and Tech-to-Market Advisors also provide teams with expert advice through quarterly reviews and onsite visits. This hands-on approach helps ensure teams can meet ambitious milestones, target and tackle problems early on, and advance their technologies towards commercialization. Program Director Dr. Isik Kizilyalli explains the importance of this active project management approach in helping teams identify and overcome barriers.