Diamond Optically Gated Junction Field Effect Transistor

Default ARPA-E Project Image

Program:
ULTRAFAST
Award:
TBD
Location:
TBD
Status:
Selected
Project Term:
TBD
Website:

Technology Description:

Lawrence Livermore National Laboratory is developing a semiconductor transistor device to enable future grid control systems to accommodate higher voltage and current than conventional devices. The team seeks to build a high-power diamond optoelectronic device that has the inherent advantages of diamond’s superior properties relative to other wide- and ultrawide-bandgap semiconductor materials. Three of the proposed devices in series would be able to support more than 6 kilovolts, almost double that of existing wide-bandgap commercial options.

Contact

ARPA-E Program Director:
Dr. Laurent Pilon
Project Contact:
Dr. Lars Voss
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
voss5@llnl.gov

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Release Date:
02/24/2023