Diamond Optically Gated Junction Field Effect Transistor

Default ARPA-E Project Image

Program:
ULTRAFAST
Award:
$3,000,000
Location:
Stanford, California
Status:
ACTIVE
Project Term:
03/01/2024 - 03/26/2027
Website:

Technology Description:

Lawrence Livermore National Laboratory is developing a semiconductor transistor device to enable future grid control systems to accommodate higher voltage and current than conventional devices. The team seeks to build a high-power diamond optoelectronic device that has the inherent advantages of diamond’s superior properties relative to other wide- and ultrawide-bandgap semiconductor materials. Three of the proposed devices in series would be able to support more than 6 kilovolts, almost double that of existing wide-bandgap commercial options.

Contact

ARPA-E Program Director:
Dr. Laurent Pilon
Project Contact:
Dr. Lars Voss
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
voss5@llnl.gov

Partners

Stanford University

Related Projects

• GaNify - Medium-Voltage Optoelectronic Power IC Building Block
• Georgia Institute of Technology (Georgia Tech) - Scalable Wide-Bandgap III-Nitride Switch (SWiNS)
• Great Lakes Crystal Technologies - High Power Diamond Transistors with Electrical and Optical Gate Control
• Lawrence Livermore National Laboratory (LLNL) - Diamond Optically Gated Junction Field Effect Transistor
• Opcondys - Ultrafast, Autonomous Grid Protection Using Linear Photonic Switching
• RTX Technology Research Center - TRIGER: Timed RF Integrated Gating for Energy Regulation
• Sandia National Laboratories - E1-Arrester for Improved EMP Protection
• Texas Tech University - Ultrawide-Bandgap Semiconductors for Extrinsic Photoconductive Switching Devices
• University of Arkansas - Heterogeneously Integrated Power Modules
• University of Buffalo - Optically Cascoded Ultrahigh Voltage Gallium Oxide Devices for Modular Multi-Converter
• University of California, Santa Barbara (UCSB) - Optically Controlled 20 kV Gallium Oxide Power Switches for Grid Resiliency
• University of Florida - A 3.3kV/200A 70kHz Half Bridge SiC Power Module with Low EMI, Low Power Loss, Good Thermal Management and High Reliability
• University of Illinois, Urbana-Champaign (UIUC) - Diamond PCSS: DIAMOND PhotoConductive Semiconductor Switches
• University of Pennsylvania - All-Optical Control of Isolated High Voltage Power Systems Using Integrated Electronic, Photonic, and Microfabricated Sensing and Breaker Technology
• University of Tennessee, Knoxville (UT) - A UNIVERSAL (Ultrafast, Noise-Immune, Versatile, Efficient, Reliable, Scalable, and Accurate Light-Controlled) Switch Module
• University of Wisconsin-Madison (UW-Madison) - Optically Triggered Ultrawide-Bandgap (UWBG) Power Electronics

Release Date:
02/24/2023