Ultrawide-Bandgap Semiconductors for Extrinsic Photoconductive Switching Devices

Default ARPA-E Project Image

Program:
ULTRAFAST
Award:
TBD
Location:
TBD
Status:
Selected
Project Term:
TBD
Website:

Technology Description:

Texas Tech University is developing a photoconductive semiconductor switching device from ultrawide-bandgap materials that would enable improved control of the grid. The ultrawide-bandgap semiconductors used in the device—hexagonal boron nitride and aluminum nitride—support higher voltage and current than legacy semiconductor materials. Texas Tech’s device seeks to enable efficient high-power and high-speed power electronics converters for a smarter grid.

Contact

ARPA-E Program Director:
Dr. Olga Spahn
Project Contact:
Prof. Jingyu Lin
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
jingyu.lin@ttu.edu

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Release Date:
02/24/2023