Ultrawide-Bandgap Semiconductors for Extrinsic Photoconductive Switching Devices

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Program:
ULTRAFAST
Award:
$3,070,735
Location:
Lubbock, Texas
Status:
ACTIVE
Project Term:
06/10/2024 - 06/09/2027

Technology Description:

Texas Tech University is developing a photoconductive semiconductor switching device from ultrawide-bandgap materials that would enable improved control of the grid. The ultrawide-bandgap semiconductors used in the device—hexagonal boron nitride and aluminum nitride—support higher voltage and current than legacy semiconductor materials. Texas Tech’s device seeks to enable efficient high-power and high-speed power electronics converters for a smarter grid.

Contact

ARPA-E Program Director:
Dr. Olga Spahn
Project Contact:
Prof. Jingyu Lin
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
jingyu.lin@ttu.edu

Partners

Opcondys, Inc.
Kyma Technologies, Inc.
Tektronix, Inc.

Related Projects


Release Date:
02/24/2023