High Power Diamond Transistors with Electrical and Optical Gate Control

Default ARPA-E Project Image

Program:
ULTRAFAST
Award:
$2,301,496
Location:
East Lansing, Michigan
Status:
ACTIVE
Project Term:
05/10/2024 - 05/09/2026
Website:

Technology Description:

Great Lakes Crystal Technologies is developing a diamond semiconductor transistor to support the control infrastructure needed for an energy grid with more distributed generation sources and more variable loads. The proposed transistor takes advantage of the properties of diamond, an ultrawide-bandgap semiconductor material with better thermal management, lower power loss, and higher operating voltage than conventional materials. The device switches can be controlled by light source and electrical means, improving electromagnetic interference immunity.

Contact

ARPA-E Program Director:
Dr. Olga Spahn
Project Contact:
Paul Quayle
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
quayle@glcrystal.com

Partners

Stanford University
General Electric
University of Illinois, Urbana Champaign
Michigan State University
Fraunhofer USA Center for Coatings and Laser Applications

Related Projects

• GaNify - Medium-Voltage Optoelectronic Power IC Building Block
• Georgia Institute of Technology (Georgia Tech) - Scalable Wide-Bandgap III-Nitride Switch (SWiNS)
• Great Lakes Crystal Technologies - High Power Diamond Transistors with Electrical and Optical Gate Control
• Lawrence Livermore National Laboratory (LLNL) - Diamond Optically Gated Junction Field Effect Transistor
• Opcondys - Ultrafast, Autonomous Grid Protection Using Linear Photonic Switching
• RTX Technology Research Center - TRIGER: Timed RF Integrated Gating for Energy Regulation
• Sandia National Laboratories - E1-Arrester for Improved EMP Protection
• Texas Tech University - Ultrawide-Bandgap Semiconductors for Extrinsic Photoconductive Switching Devices
• University of Arkansas - Heterogeneously Integrated Power Modules
• University of Buffalo - Optically Cascoded Ultrahigh Voltage Gallium Oxide Devices for Modular Multi-Converter
• University of California, Santa Barbara (UCSB) - Optically Controlled 20 kV Gallium Oxide Power Switches for Grid Resiliency
• University of Florida - A 3.3kV/200A 70kHz Half Bridge SiC Power Module with Low EMI, Low Power Loss, Good Thermal Management and High Reliability
• University of Illinois, Urbana-Champaign (UIUC) - Diamond PCSS: DIAMOND PhotoConductive Semiconductor Switches
• University of Pennsylvania - All-Optical Control of Isolated High Voltage Power Systems Using Integrated Electronic, Photonic, and Microfabricated Sensing and Breaker Technology
• University of Tennessee, Knoxville (UT) - A UNIVERSAL (Ultrafast, Noise-Immune, Versatile, Efficient, Reliable, Scalable, and Accurate Light-Controlled) Switch Module
• University of Wisconsin-Madison (UW-Madison) - Optically Triggered Ultrawide-Bandgap (UWBG) Power Electronics

Release Date:
02/24/2023