High Power Diamond Transistors with Electrical and Optical Gate Control

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Program:
ULTRAFAST
Award:
TBD
Location:
TBD
Status:
Selected
Project Term:
TBD

Technology Description:

Great Lakes Crystal Technologies is developing a diamond semiconductor transistor to support the control infrastructure needed for an energy grid with more distributed generation sources and more variable loads. The proposed transistor takes advantage of the properties of diamond, an ultrawide-bandgap semiconductor material with better thermal management, lower power loss, and higher operating voltage than conventional materials. The device switches can be controlled by light source and electrical means, improving electromagnetic interference immunity.

Contact

ARPA-E Program Director:
Dr. Olga Spahn
Project Contact:
Paul Quayle
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
quayle@glcrystal.com

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Release Date:
02/24/2023