Scalable Wide-Bandgap III-Nitride Switch (SWiNS)

Default ARPA-E Project Image

Program:
ULTRAFAST
Award:
TBD
Location:
TBD
Status:
Selected
Project Term:
TBD
Website:

Technology Description:

Georgia Institute of Technology is developing a semiconductor switching device from wide-bandgap III-Nitride material to improve grid control, resilience, and reliability. Georgia Tech’s switching device seeks to achieve remarkable current and power capabilities by utilizing carrier control phenomena which transport current through the entirety of the semiconductor volume, a capability distinct from conventional power transistor designs which channel current through narrow constrictions. If successful, the device would enable switching on nearly any transmission line using a single device, greatly reducing cost and complexity of building the future smart grid.

Contact

ARPA-E Program Director:
Dr. Olga Spahn
Project Contact:
Prof. William Alan Doolittle
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
alan.doolittle@ece.gatech.edu

Related Projects

• GaNify - Medium-Voltage Optoelectronic Power IC Building Block
• Georgia Institute of Technology - Scalable Wide-Bandgap III-Nitride Switch (SWiNS)
• Great Lakes Crystal Technologies - High Power Diamond Transistors with Electrical and Optical Gate Control
• Lawrence Livermore National Laboratory (LLNL) - Diamond Optically Gated Junction Field Effect Transistor
• NextWatt - UWBG Device with Rapid Switching and Minimal Optical Power Requirement
• Opcondys - Ultrafast, Autonomous Grid Protection Using Linear Photonic Switching
• RTX Technologies Research Center (RTRC) - TRIGER: Timed RF Integrated Gating for Energy Regulation
• Sandia National Laboratories - E1-Arrester for Improved EMP Protection
• Texas Tech University - Ultrawide-Bandgap Semiconductors for Extrinsic Photoconductive Switching Devices
• University of Arkansas - Heterogeneously Integrated Power Modules
• University of Buffalo - Optically Cascoded Ultrahigh Voltage Gallium Oxide Devices for Modular Multi-Converter
• University of California, Santa Barbara (UCSB) - Optically Controlled 20 kV Gallium Oxide Power Switches for Grid Resiliency
• University of Illinois, Urbana-Champaign (UIUC) - Diamond PCSS: DIAMOND PhotoConductive Semiconductor Switches
• University of Pennsylvania - All-Optical Control of Isolated High Voltage Power Systems Using Integrated Electronic, Photonic, and Microfabricated Sensing and Breaker Technology
• University of Tennessee, Knoxville (UT) - A UNIVERSAL (Ultrafast, Noise-Immune, Versatile, Efficient, Reliable, Scalable, and Accurate Light-Controlled) Switch Module
• University of Wisconsin-Madison (UW-Madison) - Optically Triggered Ultrawide-Bandgap (UWBG) Power Electronics

Release Date:
02/24/2023