Selective Area Doping for GaN Power Devices
Project Innovation + Advantages:
Adroit Materials will develop a gallium nitride (GaN) selective area doping process to enable high-performance, reliable GaN-based, high-power switches which are promising candidates for future high efficiency, high power electronic applications.. Specifically, doping capabilities that allow for the creation of localized doped regions must be developed for GaN in order to reach its full potential as a power electronics semiconductor. Adroit's process will focus on implantation of magnesium ions and an innovative high temperature, high pressure activation anneal, or heat treatment, process to remove implantation damage and control performance-reducing defects. By developing an in-depth understanding of the ion implantation doping process, the team will be able to demonstrate usable and reliable planar and embedded p-n junctions, the principal building block of modern electronic components like transistors.
If successful, PNDIODES projects will enable further development of a new class of power converters suitable in a broad range of application areas including automotive, industrial, residential, transportation (rail & ship), aerospace, and utilities.