Development of Cubic Boron Nitride (c-BN) Ultrawide Bandgap Semiconductors

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Program:
Exploratory Topics
Award:
$500,000
Location:
Lubbock, Texas
Status:
ACTIVE
Project Term:
10/01/2023 - 09/30/2025
Website:

Technology Description:

Texas Tech University will develop a novel method for producing electronic grade cubic boron nitride semiconductor wafers that could equip electronic devices to operate in extreme temperatures and conditions. The wafers—formed from microwave plasma chemical vapor deposition—would enable power devices that handle higher voltages and currents, furthering advancements in power distributions, electric transportation, nuclear energy, national security, health care, and material sciences.

Contact

ARPA-E Program Director:
Dr. Olga Spahn
Project Contact:
Dr. Jingyu Lin
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
jingyu.lin@ttu.edu

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