HVPE Grown GaN Conductive Substrates for Power Electronics

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Program:
Exploratory Topics
Award:
$476,190
Location:
Raleigh, North Carolina
Status:
ACTIVE
Project Term:
09/20/2023 - 09/19/2025
Website:

Technology Description:

North Carolina State University will develop a method to fabricate electrically conductive thick gallium nitride crystals that could be used in the manufacturing of substrates for vertical gallium nitride semiconductors. North Carolina State University’s pristine semiconductor substrates—composed of a material that can operate at higher temperatures and withstand higher voltages than silicon—would enable more efficient power delivery, bringing higher currents and voltages within reach in power electronics.

Contact

ARPA-E Program Director:
Dr. Olga Spahn
Project Contact:
Prof. Ramon Collazo
Press and General Inquiries Email:
ARPA-E-Comms@hq.doe.gov
Project Contact Email:
rcollaz@ncsu.edu

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